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001-es BibID:	BIBFORM004317
Első szerző:	Csik Attila (fizikus)
Cím:	Investigation of Sb diffusion in amorphous silicon / A. Csik, G. A. Langer, G. Erdélyi, D. L. Beke, Z. Erdelyi, K. Vad
Dátum:	2008
Megjegyzések:	Amorphous silicon materials and its alloys became extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry. Amorphous Si/Si1-xSbx/Si tri-layer samples with 5at% antimony concentration were prepared by direct current magnetron sputtering onto Si substrate at room temperature. Annealing of the samples was performed at different temperatures in vacuum (P < 10(-7) mbar) and 100 bar high purity (99.999%) Ar pressure. During annealing a rather slow mixing between the Sb-alloyed and the amorphous Si layers was observed. Supposing concentration independent of diffusion, the evaluated diffusion coefficients are in the range of similar to 10(-21) m(2)s(-1) at 550 degrees C.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban
Megjelenés:	Vacuum. - 82 : 2 (2008), p. 257-260. -
További szerzők:	Langer Gábor Antal (1950-) (fizikus) Erdélyi Gábor (1950-) (fizikus) Beke Dezső László (1945-) (fizikus) Erdélyi Zoltán (1974-) (fizikus) Vad Kálmán
Internet cím:	elektronikus változat
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