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001-es BibID:	BIBFORM116349
035-os BibID:	(cikkazonosító)157869 (WoS)001038076800001 (Scopus)85163432738
Első szerző:	Zolnai Z.
Cím:	Atomic structure and annealing-induced reordering of [epsilon]-Ga2O3 : A Rutherford backscattering/channeling and spectroscopic ellipsometry study / Z. Zolnai, P. Petrik, A. Németh, J. Volk, M. Bosi, L. Seravalli, R. Fornari
Dátum:	2023
ISSN:	0169-4332
Megjegyzések:	The crystallographic structure of thin Ga2O3 layers grown by metal-organic vapour phase epitaxy on Al2O3 substrate was analyzed by Rutherford Backscattering Spectrometry/Channeling (RBS/C) angular yield scans performed around the c-axis of as-grown Ga2O3. The measured widths and minimum yields of the scan curves for the Ga and O component were compared to calculations based on the continuum steering potential model. The results obtained are consistent with a crystal structure containing oxygen atoms arranged in a 4H hexagonal closely packed lattice and Ga atoms preferentially occupying octahedral interstitial sites in the 4H cells - a structure closely related to the epsilon-Ga2O3 polymorph. After high-temperature annealing remarkable structural transformation is detected via significant changes in the RBS/C spectra. This effect is related to the hexagonal-monoclinic, i.e., epsilon-beta phase transformation of Ga2O3. Spectroscopic ellipsometry spectra of as-grown and annealed samples can be best fitted using a vertically graded single-layer B-spline model. Significant differences in the dielectric functions were found, showing bandgap reduction for long term annealing. These features are related to the epsilon-beta polymorphic transformation, variation of the preferred crystallographic orientation upon annealing, and differences in residual strain and defect structure determined by the annealing conditions.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban folyóiratcikk
Megjelenés:	Applied Surface Science. - 636 (2023), p. 1-10. -
További szerzők:	Petrik Péter Németh A. Volk, J. Bosi, M. Seravalli, L. Fornari, R.
Pályázati támogatás:	OTKA K131515 OTKA
Internet cím:	Szerző által megadott URL DOI Intézményi repozitóriumban (DEA) tárolt változat
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