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001-es BibID:BIBFORM085381
035-os BibID:(cikkazonosító)044314
Első szerző:Adarsh, K. V.
Cím:Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se-As2S3 films / K. V. Adarsh, K. S. Sangunni, S. Kokenyesi, I. Ivan, M. Shipljak
Dátum:2005
ISSN:0021-8979
Megjegyzések:Optical parameters of chalcogenide glass multilayers with 12-15 nm modulation lengths prepared by thermal evaporation can be changed by laser irradiation. Photoluminescence (PL) studies were carried out on such nonirradiated and irradiated multilayered samples of a-Se/As2S3 (sublayer thickness of a-Se is 4?5 nm for one set of samples and 1-2 nm for the other set. However As2S3 sublayer thickness is 11?12 nm for both sets of samples.) PL intensity can be increased by several orders of magnitude by reducing the Se well layer (lower band gap) thickness and can be further increased by irradiating the samples with appropriate wavelengths in the range of the absorption edge. The broadening of luminescence bands takes place either with a decrease in Se layer thickness or with irradiation. The former is due to the change in interface roughness and defects because of the enhanced structural disorder while the latter is due to photoinduced interdiffusion. The photoinduced interdiffusion creates defects at the interface between Se and As2S3 by forming an As?Se?S solid solution. From the deconvoluted PL spectrum, it is shown that the peak PL intensity, full width half maximum, and the PL quantum efficiency of particular defects giving rise to PL, can be tuned by changing the sublayer thickness or by interdiffusion.
Tárgyszavak:Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban
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Megjelenés:Journal of Applied Physics. - 97 : 4 (2005), p. 1-5. -
További szerzők:Sangunni, Kanatinkal S. Kökényesi Sándor (1946-) (fizikus) Iván István Shiplyak, M.
Pályázati támogatás:T046758
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