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001-es BibID:	BIBFORM118155
035-os BibID:	(Scopus)85182510741 (cikkazonosító)159370
Első szerző:	Chou, Ta-Shun
Cím:	In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process / Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Jana Rehm, Arub Akhtar, Deshabrato Mukherjee, Peter Petrik, Andreas Popp
Dátum:	2024
ISSN:	0169-4332
Megjegyzések:	Metalorganic vapor-phase epitaxy of -Ga2O3/c-plane Al2O3 heterostructures was monitored in-situ by spectral reflectance in different wavelengths. The reflectance spectrum was analysed as a function of the growth time and the incident wavelength to estimate the growth rate and the refractive index at the growth temperatures. The obtained values are validated by ex-situ methods such as secondary ion mass spectrum measurement and spectroscopic ellipsometry. A theoretical simulation of the reflectance spectrum was carried out by combining a transfer matrix method with a multilayer model, and a good agreement with the experimental results is presented.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban folyóiratcikk A1.Surfaces A3.Metalorganic vapor phase epitaxy B1.Gallium compounds
Megjelenés:	Applied Surface Science. - 652 (2024), p. 1-7. -
További szerzők:	Bin Anooz, Saud Grüneberg, Raimund Rehm, Jana Akhtar, Arub Mukherjee, Deshabrato Petrik Péter Popp, Andreas
Pályázati támogatás:	OTKA 131515 OTKA
Internet cím:	Szerző által megadott URL DOI Intézményi repozitóriumban (DEA) tárolt változat
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001-es BibID:	BIBFORM119916
035-os BibID:	(WoS)000860975600004 (Scopus)85138187713 (cikkazonosító)154770
Első szerző:	Kalas Benjámin
Cím:	Scanning-resonance optical sensing based on a laterally graded plasmonic layer-optical properties of AgxAl1-x in the range of x=0 to 1 / Benjamin Kalas, György Sáfrán, Miklós Serényi, Miklós Fried, Péter Petrik
Dátum:	2022
ISSN:	0169-4332
Megjegyzések:	Plasmonic AgAl/Si3N4 sensor layer structure was deposited on a fused silica glass slide by dual DC magnetron sputtering. The composition of the AgxAl1?x layer was laterally graded in which x linearly changes from x=0 to x=1 over a distance of 20 mm. The Si3N4 layer serves both as a resonator and a protective layer providing homogeneous chemical properties on top of the inhomogeneous AgAl layer. The structure was illuminated through a hemi-cylinder for variable-angle measurements in the Kretschmann?Raether configuration using a focused spot that enabled the change of x by moving it along the gradient of the composition. Optical properties of AgxAl1?x in the whole composition range were obtained. The positions of resonant peaks were shifted by changing the angle of incidence and the lateral position of the spot in a flow-cell configuration. The optical sensing performance of the bilayer system was investigated for x=0 and x=1. Based on the capabilities of ellipsometry limit of detection in refractive index unit values of ?4?8?10?6 can be achieved in the resonant positions utilizing both p- and s-polarizations. Due to the flexible tunability of the resonant wavelengths by moving a focused spot, the above sensitivity is available in-situ, over the spectral range of 265-1504 nm.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban folyóiratcikk Combinatorial material science Spectroscopic ellipsometry Plasmonics Biosensing
Megjelenés:	Applied Surface Science. - 606 (2022), p. 1-12. -
További szerzők:	Sáfrán György Serényi Miklós Fried Miklós Petrik Péter
Pályázati támogatás:	K131515 OTKA K129009 OTKA TKP2021-EGA04 Egyéb
Internet cím:	Szerző által megadott URL DOI Intézményi repozitóriumban (DEA) tárolt változat
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001-es BibID:	BIBFORM116349
035-os BibID:	(cikkazonosító)157869 (WoS)001038076800001 (Scopus)85163432738
Első szerző:	Zolnai Z.
Cím:	Atomic structure and annealing-induced reordering of [epsilon]-Ga2O3 : A Rutherford backscattering/channeling and spectroscopic ellipsometry study / Z. Zolnai, P. Petrik, A. Németh, J. Volk, M. Bosi, L. Seravalli, R. Fornari
Dátum:	2023
ISSN:	0169-4332
Megjegyzések:	The crystallographic structure of thin Ga2O3 layers grown by metal-organic vapour phase epitaxy on Al2O3 substrate was analyzed by Rutherford Backscattering Spectrometry/Channeling (RBS/C) angular yield scans performed around the c-axis of as-grown Ga2O3. The measured widths and minimum yields of the scan curves for the Ga and O component were compared to calculations based on the continuum steering potential model. The results obtained are consistent with a crystal structure containing oxygen atoms arranged in a 4H hexagonal closely packed lattice and Ga atoms preferentially occupying octahedral interstitial sites in the 4H cells - a structure closely related to the epsilon-Ga2O3 polymorph. After high-temperature annealing remarkable structural transformation is detected via significant changes in the RBS/C spectra. This effect is related to the hexagonal-monoclinic, i.e., epsilon-beta phase transformation of Ga2O3. Spectroscopic ellipsometry spectra of as-grown and annealed samples can be best fitted using a vertically graded single-layer B-spline model. Significant differences in the dielectric functions were found, showing bandgap reduction for long term annealing. These features are related to the epsilon-beta polymorphic transformation, variation of the preferred crystallographic orientation upon annealing, and differences in residual strain and defect structure determined by the annealing conditions.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban folyóiratcikk
Megjelenés:	Applied Surface Science. - 636 (2023), p. 1-10. -
További szerzők:	Petrik Péter Németh A. Volk, J. Bosi, M. Seravalli, L. Fornari, R.
Pályázati támogatás:	OTKA K131515 OTKA
Internet cím:	Szerző által megadott URL DOI Intézményi repozitóriumban (DEA) tárolt változat
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