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001-es BibID:BIBFORM112433
035-os BibID:(cikkazonosító)104977 (WoS)000907332700007 (Scopus)85145662814
Első szerző:Kruhlov, Ivan O.
Cím:Inhibition of interlayer diffusion and reduction of impurities in thin metal films by ion irradiation / I.O. Kruhlov, A.K. Orlov, O. Dubikovskyi, Y. Iguchi, Z. Erdélyi, S.I. Sidorenko, T. Ishikawa, S.V. Prikhodko, S.M. Voloshko
Dátum:2023
ISSN:2352-4928
Megjegyzések:The effect of pre-irradiation on a stack of metal multilayer thin films (MLTF) with low-energy Ar+ ions followed by thermal annealing of the stack has been studied. A three-layer Ni/Cu/V structure represented the as-fabricated MLTF samples. Each layer had a thickness of 25 nm. The entire assembly was built on Si using magnetron sputtering with different targets. The samples were pre-irradiated with Ar+ ions at 400 and 800 eV. After the irradiation, the samples were further annealed at 450 ?C for 15 min in an argon atmosphere. The structure, phase, and chemical composition of the MLTF samples were examined using X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. The distribution of the primary and impurity elements in the MLTF stacks was studied before and after the treatment, determining the diffusion ability of each element and changes they cause. It was found that applying the irradiation before annealing inhibited the diffusion of Ni and V atoms into the Cu layer. In addition, samples after pre-irradiation demonstrated lower oxygen and carbon impurities in the Cu layer. The degree of oxidation in the Ni and Cu layers was also reduced. The most notable cleaning effect of the Cu layer occurred for the sample that was pre-irradiated at 800 eV.
Tárgyszavak:Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban
folyóiratcikk
Thin films
Diffusion
Low-energy ion irradiation
Impurities
Annealing
Megjelenés:Materials Today Communications. - 34 (2023), p. 1-9. -
További szerzők:Orlov, Andrii K. Dubikovskyi, Oleksandr Iguchi, Yusuke Erdélyi Zoltán (1974-) (fizikus) Sidorenko, S.I. Ishikawa, Testuya Prikhodko, Sergey V. Voloshko, Svetlana M.
Pályázati támogatás:TKP2020-IKA-04
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001-es BibID:BIBFORM103996
035-os BibID:(WoS)000507283500001 (Scopus)85082528456
Első szerző:Kruhlov, Ivan O.
Cím:Oxidation and reduction processes in Ni/Cu/Cr/Si(100) thin films under low-energy ion irradiation / Kruhlov I O, Vladymyrskyi I A, Dubikovskyi O, Sidorenko S I, Ebisu T, Kato K, Sakata O, Ishikawa T, Iguchi Y, Langer G A, Erdélyi Z, Voloshko S M
Dátum:2020
ISSN:2053-1591
Megjegyzések:Ni(25 nm)/Cu(25 nm)/Cr(25 nm) thin films were deposited by DC magnetron sputtering at room temperature onto Si(100) single-crystal substrates and irradiated by low-energy Ar+ ions in the energy range of 400-2000 eV with fluences of 1.4 x 10(16)-1.1 x 10(17 ) ion cm(-2). Influence of the ion bombardment on the structural properties, surface morphology and chemical composition was investigated using XRD, AFM, SEM, AES, XPS, SIMS and SNMS techniques. It was found that the low-energy ion bombardment does not lead to phase composition modifications, but causes reduction of Ni layer crystallites size. Optimal bombardment mode (energy 800 eV, fluence 5.6 x 10(16 )ion cm(-2)), providing reduction of impurities amount in all three layers of the stack without diffusion intermixing between main components, was determined. Calculated coefficients of internal layers passivation are in good agreement with found increase of Cr and Cu layers thicknesses due to the reduction processes. New model of reduction processes taking into account the long-range effect was proposed.
Tárgyszavak:Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban
folyóiratcikk
ion bombardment
thin films
interface
surface
reduction processes
Megjelenés:Materials Research Express. - 6 : 12 (2020), p. 126431. -
További szerzők:Vladymyrskyi, Igor A. Dubikovskyi, Oleksandr Sidorenko, Sergey I. Ebisu, Toshihiro Kato, Kenichi Sakata, Osami Ishikawa, Testuya Iguchi, Yusuke Langer Gábor Antal (1950-) (fizikus) Erdélyi Zoltán (1974-) (fizikus) Voloshko, Svetlana M.
Pályázati támogatás:GINOP-2.3.2-15-2016-00041
GINOP
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