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001-es BibID:	BIBFORM065700
035-os BibID:	(Scopus)84943819161 (WoS)000362952400012
Első szerző:	Bohdan, Roland
Cím:	Methods comparing peculiarities of surface-relief recording in amorphous chalcogenides / Roland Bohdan, Sandor Molnar, Sandor Kokenyesi
Dátum:	2015
ISSN:	1862-6300 1862-6319
Megjegyzések:	Direct surface relief recording in amorphous chalcogenide semiconductors like As20Se80 and other compositions from As(Ge)-S(Se) systems essentially depends on the chemical composition, technology, and the recording conditions, resulting discrepancies in the results and interpretations. We have developed a method of direct comparison of the relief height and form in a combined thin film samples made of the reference and investigated compositions, as well as simple way of determining the efficiency of mass transport at surface relief recording. Selection of the a-Se as reference layer enables consideration of the possible role of composition, temperature, polarization in the recording process for any other chalcogenide or other material, which possess similar relief recording effects.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban folyóiratcikk
Megjelenés:	Physica Status Solidi (A) Applications and Materials Science. - 212 : 10 (2015), p. 2186-2190. -
További szerzők:	Molnár Sándor (1990-) (fizikus) Kökényesi Sándor (1946-) (fizikus)
Pályázati támogatás:	TÁMOP-4.2.2.A-11/1/KONV-2012-0036 TÁMOP
Internet cím:	Szerző által megadott URL DOI Intézményi repozitóriumban (DEA) tárolt változat
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001-es BibID:	BIBFORM086129
035-os BibID:	(cikkazonosító)1800589
Első szerző:	Molnár Sándor (fizikus)
Cím:	Stimulated Surface Relief Erasing in Amorphous As-Se Layers : Thermal- and Light Induced Effects / Sandor Molnar, Roland Bohdan, Viktor Takats, Yuri Kaganovskii, Sandor Kokenyesi
Dátum:	2018
ISSN:	1862-6300 1862-6319
Megjegyzések:	Here the kinetics of erasing surface relief gratings (SRGs) in amorphous As20Se80 thin films are studied under various temperatures (in the range 298-408 K) and continuous?wave illumination by band gap light of various intensities (0-2.5 W cm?2) and polarizations. The SRGs with 3.5 and 15 microm periods and 300 nm amplitudes are recorded by two beam interference. By the measurements of erasing kinetics on the grating of two the different periods, the authors are able to separate contributions of viscous flow and photo?induced (PI) diffusion flow, which the authors consider as independent mechanisms of mass transfer. The authors detect that band gap light illumination does not change the viscosity of chalcogenide films. In contrast to previous results, the authors suggest that mass transport is accelerated by light due to contribution of PI diffusion flow, not by decrease of ?pure" viscous flow. Contribution of PI diffusion flow, as well as anisotropy of mass transport under illumination by polarized light, drops with increasing temperature, whereas contribution of viscous flow grows with temperature. By separation of contributions of PI diffusion and viscous flow in mass transfer, the authors can determine PI diffusion coefficients and their temperature dependences.
Tárgyszavak:	Természettudományok Fizikai tudományok idegen nyelvű folyóiratközlemény külföldi lapban folyóiratcikk
Megjelenés:	Physica Status Solidi (A) Applications and Materials Science. - 215 : 24 (2018), p. 1-7. -
További szerzők:	Bohdan, Roland Takáts Viktor Kaganovskii, Yuri S. Kökényesi Sándor (1946-) (fizikus)
Pályázati támogatás:	GINOP-2.3.2-15-2016-00041 GINOP
Internet cím:	Szerző által megadott URL DOI Intézményi repozitóriumban (DEA) tárolt változat
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